5秒后页面跳转
BDW94C PDF预览

BDW94C

更新时间: 2024-11-22 22:39:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管达林顿晶体管
页数 文件大小 规格书
6页 82K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

BDW94C 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:0.9最大集电极电流 (IC):12 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):100JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
功耗环境最大值:80 W最大功率耗散 (Abs):80 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
VCEsat-Max:3 VBase Number Matches:1

BDW94C 数据手册

 浏览型号BDW94C的Datasheet PDF文件第2页浏览型号BDW94C的Datasheet PDF文件第3页浏览型号BDW94C的Datasheet PDF文件第4页浏览型号BDW94C的Datasheet PDF文件第5页浏览型号BDW94C的Datasheet PDF文件第6页 
BDW93C  
BDW94B/BDW94C  
COMPLEMENTARY SILICON POWER  
DARLINGTON TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
COMPLEMENTARY PNP - NPN DEVICES  
INTEGRATED ANTIPARALLEL  
COLLECTOR-EMITTER DIODE  
APPLICATIONS  
LINEARAND SWITCHING INDUSTRIAL  
EQUIPMENT  
3
2
1
DESCRIPTION  
The BDW93C is a silicon Epitaxial-Base NPN  
power transistor in monolithic Darlington  
configuration mounted in Jedec TO-220 plastic  
package. It is intented for use in power linear and  
switching applications.  
TO-220  
The complementary PNP type is BDW94C.  
Also BDW94B is a PNP type.  
INTERNAL SCHEMATIC DIAGRAM  
R1 Typ. = 10 KΩ  
R2 Typ. = 150 Ω  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
BDW93C  
BDW94C  
100  
BDW94B  
VCBO  
VCEO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Collector Current  
80  
80  
V
V
100  
12  
15  
A
ICM  
IB  
Collector Peak Current  
A
Base Current  
0.2  
A
o
Ptot  
Tstg  
Tj  
80  
W
oC  
oC  
Total Dissipation at Tc 25 C  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/6  
October 1999  

BDW94C 替代型号

型号 品牌 替代类型 描述 数据表
BDW94C ONSEMI

类似代替

PNP外延硅晶体管
BDW94CFP STMICROELECTRONICS

类似代替

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BDX34C STMICROELECTRONICS

类似代替

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

与BDW94C相关器件

型号 品牌 获取价格 描述 数据表
BDW94CF FAIRCHILD

获取价格

PNP Epitaxial Silicon Transistor
BDW94CFI ETC

获取价格

TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 12A I(C) | TO-220AB
BDW94CFP STMICROELECTRONICS

获取价格

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BDW94CFTU FAIRCHILD

获取价格

PNP Epitaxial Silicon Transistor, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD,
BDW94CFTU ONSEMI

获取价格

PNP外延硅晶体管
BDW94CJ69Z FAIRCHILD

获取价格

Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plas
BDW94J69Z FAIRCHILD

获取价格

Power Bipolar Transistor, 12A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BDX016016-2 AMPHENOL

获取价格

GROUND BLOCK SZ 16 LC
BDX016017-2 AMPHENOL

获取价格

GROUND BLOCK SZ 16 WC
BDX016020-2 AMPHENOL

获取价格

GROUND BLOCK SZ 20 LC