Datasheet > BDW93C

BDW93C

更新时间： 2024-11-05 11:14:27

品牌	Logo	应用领域
安森美 - ONSEMI		局域网 PC 开关晶体管
页数	文件大小	规格书
7页	158K
描述
NPN外延硅晶体管

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技术参数
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替代型号

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BDW93C 技术参数

是否无铅：	不含铅	生命周期：	Active
零件包装代码：	SFM	包装说明：	TO-220, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	1 week
风险等级：	0.82	Is Samacsys：	N
最大集电极电流 (IC)：	12 A	集电极-发射极最大电压：	100 V
配置：	DARLINGTON WITH BUILT-IN DIODE	最小直流电流增益 (hFE)：	100
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	最大功率耗散 (Abs)：	80 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin (Sn)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

BDW93C 数据手册

Is Now Part of

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

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BDW93C 替代型号

型号	品牌	替代类型	描述	数据表
D44H11G	ONSEMI	类似代替	Complementary Silicon Power Transistors
BD180G	ONSEMI	功能相似	Plastic Medium Power Silicon PNP Transistor

与BDW93C相关器件

型号	品牌	获取价格	描述	数据表
BDW93CF	FAIRCHILD	获取价格	Hammer Drivers, Audio Amplifiers Applications
BDW93CFI	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 12A I(C) \| TO-220AB
BDW93CFP	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BDW93CFP_01	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BDW93CFTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
BDW93CJ69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BDW93CTU	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL
BDW93CTU	ONSEMI	获取价格	NPN外延硅晶体管
BDW93J69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 12A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDW94	TRSYS	获取价格	PNP SILICON POWER DARLINGTONS

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