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BD180G PDF预览

BD180G

更新时间: 2024-11-04 06:41:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管放大器PC局域网
页数 文件大小 规格书
4页 64K
描述
Plastic Medium Power Silicon PNP Transistor

BD180G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-225AA包装说明:ROHS COMPLIANT, PLASTIC, CASE 77-09, TO-225, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.68Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:224509
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-225 CASE 77-09
Samacsys Released Date:2015-11-03 12:30:39Is Samacsys:N
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-225AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):30 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

BD180G 数据手册

 浏览型号BD180G的Datasheet PDF文件第2页浏览型号BD180G的Datasheet PDF文件第3页浏览型号BD180G的Datasheet PDF文件第4页 
BD180  
Plastic Medium Power  
Silicon PNP Transistor  
This device is designed for use in 5.0 to 10 Watt audio amplifiers  
and drivers utilizing complementary or quasi complementary circuits.  
http://onsemi.com  
Features  
DC Current Gain − h = 40 (Min) @ I = 0.15 Adc  
FE  
C
3.0 AMPERES  
POWER TRANSISTORS  
PNP SILICON  
BD180 is complementary with BD179  
Pb−Free Package is Available*  
80 VOLTS, 30 WATTS  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
V
CEO  
V
CBO  
V
EBO  
80  
5.0  
1.0  
2.0  
TO−225  
CASE 77  
STYLE 1  
I
C
I
B
Base Current  
3
2
1
Total Power Dissipation @ T = 25_C  
P
30  
240  
W
C
D
Derate above 25_C  
mW/_C  
_C  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +150  
J
stg  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
q
4.16  
_C/W  
JC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
YWW  
BD180G  
Y
= Year  
WW  
= Work Week  
BD180 = Device Code  
G
= Pb−Free Package  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BD180  
TO−225  
500 Units/Box  
500 Units/Box  
TO−225  
BD180G  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 11  
BD180/D  

BD180G 替代型号

型号 品牌 替代类型 描述 数据表
BD180 ONSEMI

完全替代

POWER TRANSISTOR PNP SILICON
TIP131 ONSEMI

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