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D44H11G PDF预览

D44H11G

更新时间： 2024-11-04 03:28:11
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关PC局域网
页数 文件大小 规格书
5页 68K
描述
Complementary Silicon Power Transistors

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中文翻译

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D44H11G 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, PLASTIC, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.75
Factory Lead Time：1 week风险等级：0.65
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：224642Samacsys Pin Count：3
Samacsys Part Category：TransistorSamacsys Package Category：Transistor Outline, Vertical
Samacsys Footprint Name：TO-220 CASE221A-09Samacsys Released Date：2015-11-03 12:30:39
Is Samacsys：N其他特性：LEADFORM OPTIONS ARE AVAILABLE
外壳连接：COLLECTOR最大集电极电流 (IC)：10 A
集电极-发射极最大电压：80 V配置：SINGLE
最小直流电流增益 (hFE)：40JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：50 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：50 MHzBase Number Matches：1

D44H11G 数据手册

 浏览型号D44H11G的Datasheet PDF文件第2页浏览型号D44H11G的Datasheet PDF文件第3页浏览型号D44H11G的Datasheet PDF文件第4页浏览型号D44H11G的Datasheet PDF文件第5页 
D44H Series (NPN),  
D45H Series (PNP)  
Preferred Devices  
Complementary Silicon  
Power Transistors  
These series of plastic, silicon NPN and PNP power transistors can  
be used as general purpose power amplification and switching such as  
output or driver stages in applications such as switching regulators,  
converters and power amplifiers.  
http://onsemi.com  
10 AMP COMPLEMENTARY  
SILICON POWER  
Features  
• Low Collector−Emitter Saturation Voltage  
TRANSISTORS 60, 80 VOLTS  
V
CE(sat)  
= 1.0 V (Max) @ 8.0 A  
• Fast Switching Speeds  
• Complementary Pairs Simplifies Designs  
• Pb−Free Packages are Available*  
MARKING  
DIAGRAM  
4
MAXIMUM RATINGS  
TO−220AB  
CASE 221A−09  
Rating  
Symbol  
Value  
Unit  
D4xHyyG  
AYWW  
Collector−Emitter Voltage  
D44H8, D45H8  
V
Vdc  
CEO  
STYLE 1  
1
2
3
60  
80  
D44H11, D45H11  
Emitter Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
D4xHyy = Device Code  
x = 4 or 5  
Collector Current  
− Continuous  
I
C
yy = 8 or 11  
10  
20  
− Peak (Note 1)  
A
Y
= Assembly Location  
= Year  
Total Power Dissipation  
P
W
D
WW  
G
= Work Week  
= Pb−Free Package  
@ T = 25°C  
70  
2.0  
C
@ T = 25°C  
A
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
ORDERING INFORMATION  
†
50 Units/Rail  
50 Units/Rail  
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
Characteristic  
D44H8  
TO−220  
Symbol  
Max  
1.8  
Unit  
_C/W  
_C/W  
_C  
D44H8G  
TO−220  
(Pb−Free)  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
R
q
JA  
62.5  
275  
D44H11  
TO−220  
50 Units/Rail  
50 Units/Rail  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
D44H11G  
TO−220  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
D45H8  
TO−220  
50 Units/Rail  
50 Units/Rail  
D45H8G  
TO−220  
(Pb−Free)  
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.  
D45H11  
TO−220  
50 Units/Rail  
50 Units/Rail  
D45H11G  
TO−220  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 9  
D44H/D  
 
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中文翻译

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D44H11G 替代型号

型号 品牌 替代类型 描述 数据表
D44H11TU ONSEMI

类似代替

 功率双极晶体管，NPN，80 V，10 A
TIP131 ONSEMI

类似代替

 Darlington Complementary Silicon Power Transistors
D44H11 ONSEMI

类似代替

 COMPLEMENTARY SILICON POWER TRANSISTORS

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D44H11L MOTOROLA

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D44H11N MOTOROLA

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D44H11T MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H11TU FAIRCHILD

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 		NPN Epitaxial Silicon Transistor
D44H11TU ONSEMI

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 		功率双极晶体管，NPN，80 V，10 A
D44H11U MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H11UA MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H11W MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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