Datasheet > D44H11J3

D44H11J3

更新时间： 2024-11-04 03:28:11

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
4页	175K
描述
Low Vcesat NPN Epitaxial Planar Transistor

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中文翻译

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数据手册

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D44H11J3 数据手册

Spec. No. : C606J3-A

Issued Date : 2005.08.15

Revised Date :

CYStech Electronics Corp.

Page No. : 1/4

D^Low4^Vc4^esaH^{t NP}1^N1^EpJ^itax3^{ial Planar Transistor}

Features

• Low VCE(sat)

• High BVCEO

• Excellent current gain characteristics

Symbol

Outline

D44H11J3

TO-252

B：Base

C：Collector

E：Emitter

B C E

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VCBO

VCEO

VEBO

Collector Current (DC)

Collector Current (Pulse)

Power Dissipation @ TA=25℃

ICP

16 (Note 1)

1.75 (Note 2)

71.4 (Note 2)

6.25

P^D

Power Dissipation @ TC=25℃

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Junction Temperature

P^D

RθJA

RθJC

°C/W

°C

150

-55~+150

Storage Temperature

Tstg

°C

≦

Note : 1. Single Pulse , Pw 380µs,Duty 2%.

2. When mounted on a PCB with the minimum pad size.

D44H11J3

CYStek Product Specification

12 3 4

中文翻译

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