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D44H11TU PDF预览

D44H11TU

更新时间： 2024-11-20 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管功率双极晶体管
页数 文件大小 规格书
5页 68K
描述
功率双极晶体管，NPN，80 V，10 A

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中文翻译

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D44H11TU 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：TO-220AB, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：5.51
最大集电极电流 (IC)：10 A集电极-发射极最大电压：80 V
配置：SINGLE最小直流电流增益 (hFE)：60
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：50 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：50 MHz

D44H11TU 数据手册

 浏览型号D44H11TU的Datasheet PDF文件第2页浏览型号D44H11TU的Datasheet PDF文件第3页浏览型号D44H11TU的Datasheet PDF文件第4页浏览型号D44H11TU的Datasheet PDF文件第5页 
D44H Series (NPN),  
D45H Series (PNP)  
Preferred Devices  
Complementary Silicon  
Power Transistors  
These series of plastic, silicon NPN and PNP power transistors can  
be used as general purpose power amplification and switching such as  
output or driver stages in applications such as switching regulators,  
converters and power amplifiers.  
http://onsemi.com  
10 AMP COMPLEMENTARY  
SILICON POWER  
Features  
• Low Collector−Emitter Saturation Voltage  
TRANSISTORS 60, 80 VOLTS  
V
CE(sat)  
= 1.0 V (Max) @ 8.0 A  
• Fast Switching Speeds  
• Complementary Pairs Simplifies Designs  
• Pb−Free Packages are Available*  
MARKING  
DIAGRAM  
4
MAXIMUM RATINGS  
TO−220AB  
CASE 221A−09  
Rating  
Symbol  
Value  
Unit  
D4xHyyG  
AYWW  
Collector−Emitter Voltage  
D44H8, D45H8  
V
Vdc  
CEO  
STYLE 1  
1
2
3
60  
80  
D44H11, D45H11  
Emitter Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
D4xHyy = Device Code  
x = 4 or 5  
Collector Current  
− Continuous  
I
C
yy = 8 or 11  
10  
20  
− Peak (Note 1)  
A
Y
= Assembly Location  
= Year  
Total Power Dissipation  
P
W
D
WW  
G
= Work Week  
= Pb−Free Package  
@ T = 25°C  
70  
2.0  
C
@ T = 25°C  
A
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
ORDERING INFORMATION  
†
50 Units/Rail  
50 Units/Rail  
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
Characteristic  
D44H8  
TO−220  
Symbol  
Max  
1.8  
Unit  
_C/W  
_C/W  
_C  
D44H8G  
TO−220  
(Pb−Free)  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
R
q
JA  
62.5  
275  
D44H11  
TO−220  
50 Units/Rail  
50 Units/Rail  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
D44H11G  
TO−220  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
D45H8  
TO−220  
50 Units/Rail  
50 Units/Rail  
D45H8G  
TO−220  
(Pb−Free)  
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.  
D45H11  
TO−220  
50 Units/Rail  
50 Units/Rail  
D45H11G  
TO−220  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 9  
D44H/D  
 
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中文翻译

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D44H11TU 替代型号

型号 品牌 替代类型 描述 数据表
D44H11G ONSEMI

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D44H11U MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H11UA MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H11W MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H11WD MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H1J69Z TI

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 		NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
D44H2 MOSPEC

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 		POWER TRANSISTORS(10A,30-80V,50W)
D44H2 BOCA

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 		COMPLEMENTARY SILICON POWER TRANSISTORS
D44H2 FAIRCHILD

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 		Power Bipolar Transistor, 10A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H2 NJSEMI

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 		Trans GP BJT NPN 30V 20A 3-Pin(3+Tab) TO-220
D44H2-6203 RENESAS

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 		10A, 30V, NPN, Si, POWER TRANSISTOR, TO-220AB

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