Datasheet > BDW93CFP_01

BDW93CFP_01

更新时间： 2024-11-19 03:21:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管达林顿晶体管
页数	文件大小	规格书
4页	92K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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中文翻译

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数据手册

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BDW93CFP_01 数据手册

BDW93CFP

BDW94CFP

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

■

STMicroelectronics PREFERRED

SALESTYPES

MONOLITHIC DARLINGTON

CONFIGURATION

■

COMPLEMENTARY PNP - NPN DEVICES

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

■

FULLY MOLDED INSULATED PACKAGE

2000 V DC INSULATION (U.L. COMPLIANT)

APPLICATIONS

■

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

T0-220FP

DESCRIPTION

The BDW93CFP is a silicon Epitaxial-Base NPN

transistor in monolithic Darlington configuration

mounted in TO-220FP fully molded insulated

package. It is intented for use in power linear

and switching applications.

INTERNAL SCHEMATIC DIAGRAM

The complementary PNP type is the BDW94CFP.

R₁Typ. = 10 KΩ

R₂Typ. = 150 Ω

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

NPN

PNP

BDW93CFP

BDW94CFP

V_CBO

V_CEO

I_C

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Collector Current

100

I_CM

I_B

Collector Peak Current

Base Current

0.2

P_tot

T_stg

T_j

^oC

Total Dissipation at T_c≤ 25 C

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

For PNP types voltage and current values are negative.

1/4

September 2001

12 3 4

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