BDV64B

更新时间： 2024-11-17 22:27:27

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
6页	113K
描述
Complementary Silicon Plastic Power Darlingtons

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BDV64B 数据手册

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SEMICONDUCTOR TECHNICAL DATA

. . . for use as output devices in complementary general purpose amplifier applica-

tions.

DARLINGTONS

10 AMPERES

•

High DC Current Gain

HFE = 1000 (min.) @ 5 Adc

COMPLEMENTARY

SILICON

•

Monolithic Construction with Built–in Base Emitter Shunt Resistors

POWER TRANSISTORS

60–80–100–120 VOLTS

125 WATTS

MAXIMUM RATINGS

Rating

Symbol

Value

100

5.0

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

Collector Current — Continuous

— Peak

Base Current

0.5

Adc

Total Device Dissipation

@ T = 25 C

125

1.0

Watts

W/ C

Derate above 25 C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

CASE 340D–01

SOT 93, TO–218 TYPE

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.0

C/W

1.0

0.8

0.6

0.4

0.2

100

125

150

, CASE TEMPERATURE (°C)

Figure 1. Power Derating

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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与BDV64B相关器件

型号	品牌	获取价格	描述	数据表
BDV64BG	ONSEMI	获取价格	Complementary Silicon Plastic Power Darlingtons
BDV64BLEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plasti
BDV64C	BOURNS	获取价格	PNP SILICON POWER DARLINGTONS
BDV64C	ISC	获取价格	Silicon PNP Darlington Power Transistor
BDV64C	SAVANTIC	获取价格	Silicon PNP Power Transistors
BDV64C	COMSET	获取价格	PNP SILICON DARLINGTONS POWER TRANSISTORS
BDV64C	TRSYS	获取价格	PNP SILICON POWER DARLINGTONS
BDV64C	POINN	获取价格	PNP SILICON POWER DARLINGTONS
BDV64F	PHILIPS	获取价格	Transistor,
BDV64LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic