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BDV64C PDF预览

BDV64C

更新时间: 2024-11-18 06:41:59
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
2页 225K
描述
Silicon PNP Darlington Power Transistor

BDV64C 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Base Number Matches:1

BDV64C 数据手册

 浏览型号BDV64C的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Darlington Power Transistor  
BDV64/A/B/C  
DESCRIPTION  
·Collector Current -IC= -12A  
·Collector-Emitter Saturation Voltage-  
: VCE(sat)= -2.0V(Max.)@ IC= -5A  
·Complement to Type BDV65/A/B/C  
APPLICATIONS  
·Designed for audio output stages and general amplifier  
and switching applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
-60  
UNIT  
BDV64  
BDV64A  
BDV64B  
BDV64C  
BDV64  
-80  
Collector-Base  
Voltage  
VCBO  
V
-100  
-120  
-60  
BDV64A  
BDV64B  
BDV64C  
-80  
Collector-Emitter  
Voltage  
VCEO  
V
-100  
-120  
-5  
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage  
V
A
A
A
Collector Current-Continuous  
Collector Current-Peak  
-12  
-15  
Base Current-Continuous  
-0.5  
125  
Collector Power Dissipation  
@ TC=25℃  
Collector Power Dissipation  
@ Ta=25℃  
PC  
W
3.5  
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
1.0  
UNIT  
/W  
/W  
Thermal Resistance,Junction to Case  
Thermal Resistance,Junction to Ambient  
Rth j-c  
35.7  
Rth j-a  
isc Websitewww.iscsemi.cn  

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