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BDV64B PDF预览

BDV64B

更新时间: 2024-11-18 12:23:43
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
4页 77K
描述
PNP SILICON DARLINGTONS POWER TRANSISTORS

BDV64B 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
风险等级:5.74最大集电极电流 (IC):12 A
集电极-发射极最大电压:100 V配置:DARLINGTON
最小直流电流增益 (hFE):1000JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BDV64B 数据手册

 浏览型号BDV64B的Datasheet PDF文件第2页浏览型号BDV64B的Datasheet PDF文件第3页浏览型号BDV64B的Datasheet PDF文件第4页 
BDV64-A-B-C  
PNP SILICON DARLINGTONS POWER TRANSISTORS  
They are silicon epitaxial base transistors mounted in TO-3PN.  
Theyare designed for audio output stages and general amplifier and switching applications.  
complementary is BDV65-A-B-C  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
BDV64  
-60  
-80  
-100  
-120  
-60  
BDV64A  
BDV64B  
BDV64C  
BDV64  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
V
BDV64A  
BDV64B  
BDV64C  
BDV64  
BDV64A  
BDV64B  
BDV64C  
BDV64  
BDV64A  
BDV64B  
BDV64C  
BDV64  
BDV64A  
BDV64B  
BDV64C  
BDV64  
-80  
-100  
-120  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
-5.0  
-12  
-15  
-0.5  
A
A
ICM  
Collector Peak Current  
Base Current  
BDV64A  
BDV64B  
BDV64C  
IB  
26/09/2012  
COMSET SEMICONDUCTORS  
1/4  

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