5秒后页面跳转
BDV64 PDF预览

BDV64

更新时间: 2024-09-25 03:21:35
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
5页 110K
描述
PNP SILICON POWER DARLINGTONS

BDV64 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.19外壳连接:COLLECTOR
最大集电极电流 (IC):12 A集电极-发射极最大电压:60 V
配置:DARLINGTON最小直流电流增益 (hFE):1000
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

BDV64 数据手册

 浏览型号BDV64的Datasheet PDF文件第2页浏览型号BDV64的Datasheet PDF文件第3页浏览型号BDV64的Datasheet PDF文件第4页浏览型号BDV64的Datasheet PDF文件第5页 
BDV64, BDV64A, BDV64B, BDV64C  
PNP SILICON POWER DARLINGTONS  
Designed for Complementary Use with  
BDV65, BDV65A, BDV65B and BDV65C  
SOT-93 PACKAGE  
(TOP VIEW)  
125 W at 25°C CaseTemperature  
12 A Continuous Collector Current  
B
C
E
1
2
3
Minimum h of 1000 at 4 V, 5 A  
FE  
Pin 2 is in electrical contact with the mounting base.  
MDTRAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BDV64  
-60  
-80  
BDV64A  
BDV64B  
BDV64C  
BDV64  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
VCBO  
V
-100  
-120  
-60  
BDV64A  
BDV64B  
BDV64C  
-80  
VCEO  
V
-100  
-120  
-5  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
-12  
-15  
A
-0.5  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Operating junction temperature range  
Ptot  
Ptot  
Tj  
125  
W
W
°C  
°C  
°C  
3.5  
-65 to +150  
-65 to +150  
260  
Storage temperature range  
Tstg  
TL  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp 0.1 ms, duty cycle 10%  
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.  
JUNE 1993 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

与BDV64相关器件

型号 品牌 获取价格 描述 数据表
BDV64A MOSPEC

获取价格

POWER TRANSISTORS(12A,125W)
BDV64A TRSYS

获取价格

PNP SILICON POWER DARLINGTONS
BDV64A POINN

获取价格

PNP SILICON POWER DARLINGTONS
BDV64A BOURNS

获取价格

PNP SILICON POWER DARLINGTONS
BDV64A COMSET

获取价格

PNP SILICON DARLINGTONS POWER TRANSISTORS
BDV64A ISC

获取价格

Silicon PNP Darlington Power Transistor
BDV64A SAVANTIC

获取价格

Silicon PNP Power Transistors
BDV64ALEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic
BDV64B SAVANTIC

获取价格

Silicon PNP Power Transistors
BDV64B ISC

获取价格

Silicon PNP Power Transistors