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BD678 PDF预览

BD678

更新时间: 2024-11-04 08:51:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 41K
描述
Silicon PNP Darligton Power Transistors

BD678 数据手册

 浏览型号BD678的Datasheet PDF文件第2页浏览型号BD678的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Darligton Power Transistors  
BD676/BD678/BD680  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type BD675/BD677/BD679  
·DARLINGTON  
·High DC current gain  
APPLICATIONS  
·For use as output devices in  
complementary general–purpose  
amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings (Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-45  
UNIT  
BD676  
BD678  
BD680  
BD676  
BD678  
BD680  
VCBO  
Collector-base voltage  
Open emitter  
V
-60  
-80  
-45  
VCEO  
Collector-emitter voltage  
Open base  
V
-60  
-80  
VEBO  
IC  
Emitter -base voltage  
Collector current  
Open collector  
-5  
V
A
-4  
IB  
Base current  
-0.1  
40  
A
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
W
150  
-55~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
MAX  
UNIT  
Rth j-c  
3.13  
/W  

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