BD677G

更新时间： 2024-11-03 04:09:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	383K
描述
Plastic Medium−Power Silicon NPN Darlingtons

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BD677G 数据手册

BD6xxx

Complementary power Darlington transistors

Features

■ Good h linearity

■ High f frequency

■ Monolithic Darlington configuration with

integrated antiparallel collector-emitter diode

Applications

■ Linear and switching industrial equipment

SOT-32

Description

The devices are manufactured in planar base

island technology with monolithic Darlington

configuration.

Figure 1.

Internal schematic diagram

R1 typ.= 15 KΩ

R2 typ.= 100 Ω

Table 1.

Device summary

Order codes

Marking

Package

Packaging

BD677

BD677A

BD678

BD678A

BD679

BD679A

BD680

BD680A

BD681

BD682

BD677

BD677A

BD678

BD678A

BD679

BD679A

BD680

BD680A

BD681

BD682

SOT-32

Tube

January 2008

Rev 5

1/12

www.st.com

12 3 4 5 6 7...12

中文翻译

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与BD677G相关器件

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BD677LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
BD677T	STMICROELECTRONICS	获取价格	暂无描述
BD678	COMSET	获取价格	SILICON DARLINGTON POWER TRANSISTORS
BD678	SAVANTIC	获取价格	Silicon PNP Darligton Power Transistors
BD678	ISC	获取价格	Silicon PNP Darligton Power Transistors
BD678	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BD678	MOTOROLA	获取价格	Plastic Medium-Power Silicon PNP Darlingtons
BD678	ONSEMI	获取价格	DARLINGTON POWER TRANSISTORS PNP SILICON
BD678	INFINEON	获取价格	NPN SILICON DARLINGTON TRANSISTORS
BD678	CENTRAL	获取价格	4A,60V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington