Datasheet > BD678

BD678

更新时间： 2024-09-23 08:51:43

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	102K
描述
Silicon PNP Darligton Power Transistors

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中文翻译

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BD678 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Darligton Power Transistors

BD676/BD678/BD680

DESCRIPTION

·With TO-126 package

·Complement to type BD675/BD677/BD679

·DARLINGTON

·High DC current gain

APPLICATIONS

·For use as output devices in

complementary general–purpose

amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

-45

UNIT

BD676

BD678

BD680

BD676

BD678

BD680

V_CBO

Collector-base voltage

Open emitter

-60

-80

-45

V_CEO

Collector-emitter voltage

Open base

-60

-80

V_EBO

I_C

Emitter -base voltage

Collector current

Open collector

-5

ꢀ

-4

I_B

Base current

-0.1

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

-55~150

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance junction to case

3.13

ꢀ/W

12 3

中文翻译

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BD678A	ONSEMI	获取价格	DARLINGTON POWER TRANSISTORS PNP SILICON
BD678A	ISC	获取价格	Silicon PNP Power Transistors
BD678A	SAVANTIC	获取价格	Silicon PNP Power Transistors
BD678A	COMSET	获取价格	SILICON DARLINGTON POWER TRANSISTORS
BD678A	NSC	获取价格	TRANSISTOR,BJT,DARLINGTON,PNP,60V V(BR)CEO,4A I(C),TO-126
BD678A	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS