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BD546 PDF预览

BD546

更新时间: 2024-11-03 04:09:15
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管
页数 文件大小 规格书
5页 105K
描述
PNP SILICON POWER TRANSISTORS

BD546 数据手册

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BD546, BD546A, BD546B, BD546C  
PNP SILICON POWER TRANSISTORS  
Designed for Complementary Use with the  
BD545 Series  
SOT-93 PACKAGE  
(TOP VIEW)  
85 W at 25°C Case Temperature  
B
C
E
1
2
3
15 A Continuous Collector Current  
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRAAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD546  
-40  
-60  
BD546A  
BD546B  
BD546C  
BD546  
Collector-base voltage (IE = 0)  
VCBO  
V
-80  
-100  
-40  
BD546A  
BD546B  
BD546C  
-60  
Collector-emitter voltage (IB = 0) (see Note 1)  
VCEO  
V
-80  
-100  
Emitter-base voltage  
VEBO  
IC  
-5  
V
Continuous collector current  
-15  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Operating free air temperature range  
Ptot  
Ptot  
TA  
85  
W
W
°C  
°C  
°C  
°C  
3.5  
-65 to +150  
-65 to +150  
-65 to +150  
260  
Operating junction temperature range  
Tj  
Storage temperature range  
Tstg  
TL  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. These values apply when the base-emitter diode is open circuited.  
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.  
JUNE 1973 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

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