BD546C

更新时间： 2024-11-03 06:41:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	229K
描述
Silicon PNP Power Transistor

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数据手册

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BD546C 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD546/A/B/C

DESCRIPTION

·Collector Current -I_C= -15A

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -40V(Min)- BD546; -60V(Min)- BD546A

-80V(Min)- BD546B; -100V(Min)- BD546C

·Complement to Type BD545/A/B/C

APPLICATIONS

·Designed for use in general purpose power amplifier and

switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

-40

UNIT

BD546

BD546A

BD546B

BD546C

BD546

-60

V_CBO

Collector-Base Voltage

-80

-100

-40

BD546A

BD546B

BD546C

-60

Collector-Emitter

Voltage

V_CEO

-80

-100

-5

V_EBO

I_C

Emitter-Base Voltage

Collector Current-Continuous

-15

Collector Power Dissipation

@ T_a=25℃

Collector Power Dissipation

@ T_C=25℃

3.5

P_C

T_J

Junction Temperature

150

-65~150

℃

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

1.47

35.7

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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