BD550

更新时间： 2024-11-26 06:41:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	73K
描述
isc Silicon NPN Power Transistors

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中文翻译

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技术参数
数据手册

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BD550 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.54
Base Number Matches：	1

BD550 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BD550

DESCRIPTION

·High Power Dissipation

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 110V(Min)

APPLICATIONS

·Designed for use as either driver or output unit applications

in audio amplifier circuits.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CER

V_CEO

V_EBO

I_C

PARAMETER

MAX

130

110

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

R_BE= 100Ω

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Continuous

I_B

Collector Power Dissipation

@T_C=25℃

P_C

150

200

-65~200

℃

T_j

Junction Temperature

T_stg

Storage Temperature Range

isc Website：www.iscsemi.cn

中文翻译

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