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BD546C PDF预览

BD546C

更新时间: 2024-11-25 22:39:31
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POINN 晶体晶体管
页数 文件大小 规格书
6页 92K
描述
PNP SILICON POWER TRANSISTORS

BD546C 数据手册

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BD546, BD546A, BD546B, BD546C  
PNP SILICON POWER TRANSISTORS  
Copyright © 1997, Power Innovations Limited, UK  
JUNE 1973 - REVISED MARCH 1997  
Designed for Complementary Use with the  
BD545 Series  
SOT-93 PACKAGE  
(TOP VIEW)  
85 W at 25°C Case Temperature  
B
C
E
1
2
3
15 A Continuous Collector Current  
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD546  
-40  
-60  
BD546A  
BD546B  
BD546C  
BD546  
Collector-base voltage (IE = 0)  
VCBO  
V
-80  
-100  
-40  
BD546A  
BD546B  
BD546C  
-60  
Collector-emitter voltage (IB = 0) (see Note 1)  
VCEO  
V
-80  
-100  
Emitter-base voltage  
VEBO  
IC  
-5  
V
Continuous collector current  
-15  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Operating free air temperature range  
Ptot  
Ptot  
TA  
85  
W
W
°C  
°C  
°C  
°C  
3.5  
-65 to +150  
-65 to +150  
-65 to +150  
260  
Operating junction temperature range  
Tj  
Storage temperature range  
Tstg  
TL  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. These values apply when the base-emitter diode is open circuited.  
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1

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