Datasheet > BD546B

BD546B

更新时间： 2024-11-02 22:39:31

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POINN		晶体晶体管局域网
页数	文件大小	规格书
6页	92K
描述
PNP SILICON POWER TRANSISTORS

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数据手册

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BD546B 数据手册

BD546, BD546A, BD546B, BD546C

PNP SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

●

Designed for Complementary Use with the

BD545 Series

SOT-93 PACKAGE

(TOP VIEW)

●

85 W at 25°C Case Temperature

15 A Continuous Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD546

-40

-60

BD546A

BD546B

BD546C

BD546

Collector-base voltage (I_E= 0)

V_CBO

-80

-100

-40

BD546A

BD546B

BD546C

-60

Collector-emitter voltage (I_B= 0) (see Note 1)

V_CEO

-80

-100

Emitter-base voltage

V_EBO

I_C

-5

Continuous collector current

-15

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Operating free air temperature range

P_tot

T_A

°C

3.5

-65 to +150

260

Operating junction temperature range

T_j

Storage temperature range

T_stg

T_L

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. These values apply when the base-emitter diode is open circuited.

2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

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