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BD244CTU PDF预览

BD244CTU

更新时间: 2024-11-27 11:13:39
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
6页 157K
描述
6.0 A, 100 V PNP Bipolar Power Transistor

BD244CTU 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:TO-220, 3 PINReach Compliance Code:unknown
Factory Lead Time:17 weeks风险等级:2.1
外壳连接:COLLECTOR最大集电极电流 (IC):6 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:PNP最大功率耗散 (Abs):65 W
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
VCEsat-Max:1.5 VBase Number Matches:1

BD244CTU 数据手册

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BD244CTU 替代型号

型号 品牌 替代类型 描述 数据表
BD244CG ONSEMI

完全替代

Complementary Silicon Plastic Power Transistors
TIP42CTU ONSEMI

类似代替

PNP外延硅晶体管
TIP42CG ONSEMI

类似代替

Complementary Silicon Plastic Power Transistors

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BD244-DR6280 RENESAS

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Power Bipolar Transistor, 7A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti