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BD2320UEFJ-LA PDF预览

BD2320UEFJ-LA

更新时间: 2024-11-30 11:08:15
品牌 Logo 应用领域
罗姆 - ROHM 生产线栅极驱动二极管驱动器
页数 文件大小 规格书
21页 1127K
描述
该产品是能够保证向工业设备市场长期供应的产品,而且是非常适用于这些应用领域的产品。BD2320UEFJ-LA是一款100V耐压的高低边栅极驱动器,可驱动使用自举方式的外置Nch-FET。该产品内置100V耐压的自举二极管,输入逻辑电源电压支持3.3V和5.0V。作为保护功能,高边和低边都配有欠压锁定电路(UVLO)。本IC是从系列型号BD2320EFJ-LA以提高生产效率为目的变更生产线的型号,在新项目选型时,建议选择该型号,在技术规格书中的保证特性并没有差异。此外,由于文档和设计模型等也没有差异,因此除非另有说明,ROHM将公开BD2320EFJ-LAE2的数据。

BD2320UEFJ-LA 数据手册

 浏览型号BD2320UEFJ-LA的Datasheet PDF文件第2页浏览型号BD2320UEFJ-LA的Datasheet PDF文件第3页浏览型号BD2320UEFJ-LA的Datasheet PDF文件第4页浏览型号BD2320UEFJ-LA的Datasheet PDF文件第5页浏览型号BD2320UEFJ-LA的Datasheet PDF文件第6页浏览型号BD2320UEFJ-LA的Datasheet PDF文件第7页 
Datasheet  
100 V VB 3.5 A/4.5 A Peak Current  
High Frequency High-Side and Low-Side  
Driver  
BD2320EFJ-LA BD2320UEFJ-LA  
General Description  
Key Specification  
This is the product guarantees long time support in  
industrial market.  
High-Side Supply Voltage and Floating Voltage:100 V  
Output Voltage Range:  
Output Current Io+/Io-:  
Propagation Delay:  
Delay Matching:  
Offset Voltage Pin Leak Current:  
Operating Temperature Range:  
7.5 V to 14.5 V  
3.5 A/4.5 A  
27 ns (Typ)  
12 ns (Max)  
10 µA (Max)  
-40 °C to +125 °C  
BD2320EFJ-LA and BD2320UEFJ-LA are the 100 V  
maximum voltage High-Side and Low-Side gate drivers  
which can drive external Nch-FET using the bootstrap  
method. The driver includes a 100 V bootstrap diode and  
independent inputs control for High-Side and Low-Side.  
3.3 V and 5.0 V are available for interface voltage. Under  
Voltage Lockout circuits are built in for High-Side and  
Low-Side.  
Package  
HTSOP-J8  
W (Typ) x D (Typ) x H (Max)  
4.9 mm x 6.0 mm x 1.0 mm  
Features  
Long Time Support Product for Industrial Applications.  
Under Voltage Lockout (UVLO) for High-Side and  
Low-Side Driver  
3.3 V and 5.0 V Interface Voltage  
Output In-phase with Input Signal  
Applications  
Power Supplies for Telecom and Datacom.  
MOSFET Application  
Half-bridge and Full-bridge Converters  
Forward Converters  
Typical Application Circuit  
Up to 88 V  
12 V  
VB  
HIN  
HIN  
HO  
LIN  
LIN  
TO  
LOAD  
VS  
VCC  
LO  
GND  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays.  
www.rohm.com  
© 2020 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 14 • 001  
TSZ02201-0Q2Q0A800840-1-2  
29.Mar.2022 Rev.002  
1/18  

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