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BD233

更新时间: 2024-11-29 03:21:31
品牌 Logo 应用领域
TRSYS 晶体晶体管局域网
页数 文件大小 规格书
1页 58K
描述
Plastic-Encapsulated Transistors

BD233 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Base Number Matches:1

BD233 数据手册

  
Transys  
Electronics  
L
I M I T E D  
TO-126 Plastic-Encapsulated Transistors  
BD233/235/237 TRANSISTOR (NPN)  
TO-126  
FEATURES  
1. EMITTER  
2. COLLECTOR  
3. BASE  
Power dissipation  
PCM:  
1.25 W (Tamb=25)  
Collector current  
ICM:  
1 2 3  
2
A
Collector-base voltage  
V(BR)CBO  
:
BD233 : 45  
BD235: 60  
BD237: 100  
V
V
V
Operating and storage junction temperature range  
TJ : 150℃  
Tstg: -65to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
MAX  
UNIT  
45  
60  
Collector-base breakdown voltage  
BD233  
BD235  
BD237  
BD233  
BD235  
BD237  
V(BR)CBO  
V
Ic= 100µA, IE=0  
100  
45  
Collector-emitter breakdown voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
Ic= 10mA, IB=0  
60  
V
V
80  
5
Emitter-base breakdown voltage  
Collector cut-off current  
IE= 100µA, IC=0  
VCB= 45V, IE=0  
BD233  
BD235  
BD237  
VCB= 60V, IE=0  
100  
1
µA  
mA  
VCB= 100V, IE=0  
IEBO  
HFE(1)  
HFE(2)  
VCE(sat)  
VEB= 5V, IC=0  
VCE= 2V, IC=150mA  
VCE=2V, IC= 1A  
Emitter cut-off current  
DC current gain  
40  
25  
IC=1A, IB= 100m A  
0.6  
V
Collector-emitter saturation voltage  
Transition frequency  
VCE=10V, Ic=250mA  
f =10MHz  
fT  
3
MHz  

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