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BD234 PDF预览

BD234

更新时间: 2024-11-30 14:55:03
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
19页 785K
描述
45V,2A,25W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

BD234 数据手册

 浏览型号BD234的Datasheet PDF文件第2页浏览型号BD234的Datasheet PDF文件第3页浏览型号BD234的Datasheet PDF文件第4页浏览型号BD234的Datasheet PDF文件第5页浏览型号BD234的Datasheet PDF文件第6页浏览型号BD234的Datasheet PDF文件第7页 
BD234  
BD236  
BD238  
www.centralsemi.com  
DESCRIPTION:  
SILICON  
The CENTRAL SEMICONDUCTOR BD234, BD236,  
and BD238 are silicon PNP power transistors designed  
for medium power amplifier and switching applications.  
PNP POWER TRANSISTORS  
MARKING: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL  
BD234  
BD236  
BD238  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
45  
60  
100  
V
CBO  
CER  
CEO  
EBO  
V
V
V
45  
45  
60  
100  
80  
V
V
60  
5.0  
V
Continuous Collector Current  
Peak Collector Current  
I
2.0  
A
C
I
6.0  
A
CM  
Power Dissipation (T =25°C)  
C
Operating and Storage Junction Temperature  
P
25  
W
°C  
D
T , T  
-65 to +150  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
BD234  
MIN MAX  
BD236  
MIN MAX  
BD238  
MIN MAX  
C
SYMBOL  
TEST CONDITIONS  
UNITS  
I
V
=Rated V  
-
100  
1.0  
-
-
100  
1.0  
-
-
100  
1.0  
-
μA  
CBO  
CB  
CBO  
I
V
=5.0V  
-
-
-
mA  
V
EBO  
EB  
BV  
I =100mA  
45  
-
60  
-
80  
-
CEO  
CE(SAT)  
BE(ON)  
FE  
C
V
V
I =1.0A, I =100mA  
0.6  
1.3  
-
0.6  
1.3  
-
0.6  
1.3  
-
V
C
B
V
=2.0V, I =1.0A  
-
-
-
V
CE  
CE  
CE  
CE  
C
h
h
V
V
V
=2.0V, I =150mA  
40  
25  
3.0  
40  
25  
3.0  
40  
25  
3.0  
C
=2.0V, I =1.0A  
-
-
-
FE  
C
f
=10V, I =250mA  
-
-
-
MHz  
T
C
R1 (7-September 2022)  

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