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BD234 PDF预览

BD234

更新时间: 2024-11-28 22:27:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关
页数 文件大小 规格书
4页 40K
描述
Medium Power Linear and Switching

BD234 数据手册

 浏览型号BD234的Datasheet PDF文件第2页浏览型号BD234的Datasheet PDF文件第3页浏览型号BD234的Datasheet PDF文件第4页 
BD234/236/238  
Medium Power Linear and Switching  
Applications  
Complement to BD 233/235/237 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
CBO  
: BD234  
: BD236  
: BD238  
- 45  
- 60  
- 100  
V
V
V
V
CEO  
CER  
EBO  
: BD234  
: BD236  
: BD238  
- 45  
- 60  
- 80  
V
V
V
V
V
: BD234  
: BD236  
: BD238  
- 45  
- 60  
- 100  
V
V
V
Emitter-Base Voltage  
Collector Current (DC)  
- 5  
- 2  
V
A
I
I
C
*Collector Current (Pulse)  
- 6  
A
CP  
P
Collector Dissipation (T =25°C)  
25  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: BD234  
: BD236  
: BD238  
I = - 100mA, I = 0  
- 45  
- 60  
- 80  
V
V
V
C
B
I
Collector Cut-off Current  
: BD234  
CBO  
V
V
V
= - 45V, I = 0  
- 100  
- 100  
- 100  
µA  
µA  
µA  
CB  
E
: BD236  
: BD238  
= - 60V, I = 0  
CB  
CB  
E
= - 100V, I = 0  
E
I
Emitter Cut-off Current  
* DC Current Gain  
V
= - 5V, I = 0  
- 1  
mA  
EBO  
EB  
C
h
V
V
= - 2V, I = - 150mA  
40  
25  
FE  
CE  
CE  
C
= - 2V, I = - 1A  
C
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
I
= - 1A , I = - 0.1A  
- 0.6  
- 1.3  
V
V
CE  
C
B
V
(on)  
V
V
= - 2V, I = - 1A  
C
BE  
CE  
CE  
f
Current Gain Bandwidth Product  
= - 10V, I = -250mA  
3
MHz  
T
C
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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