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BD237 PDF预览

BD237

更新时间: 2024-02-29 23:16:35
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 101K
描述
Silicon NPN Power Transistors

BD237 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-126
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:7.6
最大集电极电流 (IC):2 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):25
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

BD237 数据手册

 浏览型号BD237的Datasheet PDF文件第2页浏览型号BD237的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BD233 BD235 BD237  
DESCRIPTION  
·With TO-126 package  
·Complement to type BD234 /236 /238  
APPLICATIONS  
·For medium power linear and  
switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings (Ta=25ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
BD233  
BD235  
BD237  
BD233  
BD235  
BD237  
45  
60  
VCBO  
Collector-base voltage  
Open emitter  
Open base  
V
100  
45  
VCEO  
Collector-emitter voltage  
V
60  
80  
VEBO  
IC  
Emitter -base voltage  
Collector current (DC)  
Collector current-Peak  
Collector power dissipation  
Junction temperature  
Storage temperature  
Open collector  
5
V
A
A
W
2
ICM  
PC  
Tj  
6
TC=25ꢀ  
25  
150  
-65~150  
Tstg  

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Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/