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BD236 PDF预览

BD236

更新时间: 2024-11-28 22:27:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管开关局域网
页数 文件大小 规格书
5页 78K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

BD236 数据手册

 浏览型号BD236的Datasheet PDF文件第2页浏览型号BD236的Datasheet PDF文件第3页浏览型号BD236的Datasheet PDF文件第4页浏览型号BD236的Datasheet PDF文件第5页 
BD235/BD236  
BD237/BD238  
COMPLEMENTARY SILICON POWER TRANSISTORS  
SGS-THOMSON PREFERRED SALESTYPES  
DESCRIPTION  
The BD235 and BD237 are silicon epitaxial-base  
NPN power transistors in Jedec SOT-32 plastic  
package inteded for use in medium power linear  
and switching applications.  
The complementary PNP types are BD236 and  
BD238 respectively.  
1
2
3
SOT-32  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
BD235  
BD236  
60  
BD237  
BD238  
100  
VCBO  
VCER  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Base Voltage (RBE = 1K)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
60  
100  
60  
80  
V
5
V
2
A
ICM  
Collector Peak Current  
Total Dissipation at Tc = 25 oC  
6
25  
A
Ptot  
Tstg  
Tj  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/5  
September 1997  

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