Datasheet > BD237/D

BD237/D

更新时间： 2024-09-22 23:35:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	49K
描述
Plastic Medium Power Silicon NPN Transistor

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数据手册

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BD237/D 数据手册

ON Semiconductort

NPN

BD237

PNP

Plastic Medium Power Silicon

NPN Transistor

BD238

*ON Semiconductor Preferred Device

. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers

utilizing complementary or quasi complementary circuits.

2.0 AMPERES

POWER TRANSISTORS

NPN SILICON

• DC Current Gain —

= 40 (Min) @ I = 0.15 Adc

80 VOLTS

25 WATTS

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Watts

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

CEO

CBO

EBO

100

5.0

2.0

Base Current

1.0

Total Device Dissipation @ T = 25_C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

CASE 77–09

TO–225AA TYPE

Symbol

Max

Unit

Thermal Resistance, Junction to Case

5.0

_C/W

ELECTRICAL CHARACTERISTICS (T_C= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector–Emitter Sustaining Voltage*

(I = 0.1 Adc, I = 0)

—

Vdc

(BR)CEO

Collector Cutoff Current

(V = 100 Vdc, I = 0)

—

0.1

1.0

mAdc

CBO

Emitter Cutoff Current

EBO

(V = 5.0 Vdc, I = 0)

DC Current Gain

(I = 0.15 A, V = 2.0 V)

FE1

FE2

—

(I = 1.0 A, V = 2.0 V)

Collector–Emitter Saturation Voltage*

(I = 1.0 Adc, I = 0.1 Adc)

—

0.6

1.3

—

Vdc

MHz

CE(sat)

Base–Emitter On Voltage*

(I = 1.0 Adc, V = 2.0 Vdc)

BE(on)

—

Current–Gain — Bandwidth Product

(I = 250 mAdc, V = 10 Vdc, f = 1.0 MHz)

3.0

*Pulse Test: Pulse Width x 300 µs, Duty Cycle x 2.0%.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

April, 2001 – Rev. 10

BD237/D

12 3 4

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