BD237

更新时间： 2024-11-28 22:27:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	107K
描述
POWER TRANSISTORS NPN SILICON

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数据手册
替代型号

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BD237 数据手册

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SEMICONDUCTOR TECHNICAL DATA

2.0 AMPERES

POWER TRANSISTORS

NPN SILICON

. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing

complementary or quasi complementary circuits.

•

DC Current Gain — h

= 40 (Min) @ I = 0.15 Adc

80 VOLTS

25 WATTS

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Watts

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

CEO

CBO

EBO

100

5.0

2.0

1.0

Base Current

Total Device Dissipation @ T = 25 C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

CASE 77–08

TO–225AA TYPE

Symbol

Max

Unit

Thermal Resistance, Junction to Case

5.0

C/W

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector–Emitter Sustaining Voltage*

(I = 0.1 Adc, I = 0)

—

Vdc

(BR)CEO

Collector Cutoff Current

(V = 100 Vdc, I = 0)

—

0.1

1.0

mAdc

CBO

Emitter Cutoff Current

(V = 5.0 Vdc, I = 0)

EBO

DC Current Gain

(I = 0.15 A, V

= 2.0 V)

FE1

FE2

—

= 2.0 V)

(I = 1.0 A, V

Collector–Emitter Saturation Voltage*

—

0.6

1.3

—

Vdc

MHz

CE(sat)

(I = 1.0 Adc, I = 0.1 Adc)

Base–Emitter On Voltage*

(I = 1.0 Adc, V = 2.0 Vdc)

BE(on)

—

Current–Gain — Bandwidth Product

3.0

(I = 250 mAdc, V

C CE

= 10 Vdc, f = 1.0 MHz)

* Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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BD237 替代型号

型号	品牌	替代类型	描述	数据表
BD237G	ONSEMI	类似代替	Plastic Medium Power Bipolar Transistors
BD237STU	ONSEMI	功能相似	2.0 A，100 V，25W，NPN 外延硅双极功率晶体管
BD237STU	FAIRCHILD	功能相似	Medium Power Linear and Switching Applications

与BD237相关器件

型号	品牌	获取价格	描述	数据表
BD237/D	ETC	获取价格	Plastic Medium Power Silicon NPN Transistor
BD2378	UTC	获取价格	COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
BD2378_15	UTC	获取价格	COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE
BD2378G-K08-5060-R	UTC	获取价格	COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
BD2378L-K08-5060-R	UTC	获取价格	COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
BD237D	DCCOM	获取价格	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
BD237G	ONSEMI	获取价格	Plastic Medium Power Bipolar Transistors
BD237G-T60-K	UTC	获取价格	Power Bipolar Transistor,
BD237G-T6S-K	UTC	获取价格	Power Bipolar Transistor,
BD237LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/