Datasheet > BD237-S

BD237-S

更新时间： 2024-11-29 04:09:11

品牌	Logo	应用领域
CDIL		晶体晶体管
页数	文件大小	规格书
3页	74K
描述
NPN EPITAXIAL SILICON POWER TRANSISTOR

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数据手册

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BD237-S 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

NPN EPITAXIAL SILICON POWER TRANSISTOR

BD237-S

TO126

Plastic Package

Intended for use in Medium Power Linear Switching Applications

ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)

VALUE

120

DESCRIPTION

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

UNIT

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

6.0

2.0

I_CM

8.0

Collector Peak Current

Total Dissipation @ T_a=25ºC

P_D

T_stg

T_j

1.30

ºC

- 65 to +150

150

Storage Temperature

Operating Junction Temperature

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

120

TYP MAX

UNIT

V_CBO

I_C=10mA, I_E=0

I_C=1mA, I_B=0

Collector Base Voltage

Collector Emitter Voltage

V_CEO

*V_{CE (sat)}

*V_{BE (sat)}

I_CBO

I_C=2A, I_B=200mA

V_CB=100V_,I_E=0

V_EB=4V, I_C=0

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Collector Cut Off Current

Emitter Cut Off Current

0.15

0.9

0.4

1.2

1.0

260

I_EBO

*h_FE

I_C=1A, V_CE=2V

I_C=2A, V_CE=2V

I_C=3A, V_CE=2V

DC Current Gain

f_T

I_C=250mA, V_CE=10V

Current Gain Bandwidth Product

MHz

*Pulsed Pulse Duration=300ms, Duty Cycle=1.5%

BD237S Rev_1 111204E

Data Sheet

Page 1 of 3

Continental Device India Limited

12 3

中文翻译

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