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BD234

更新时间： 2024-11-29 06:41:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
4页 64K
描述
Plastic Medium Power Bipolar Transistors

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BD234 数据手册

 浏览型号BD234的Datasheet PDF文件第2页浏览型号BD234的Datasheet PDF文件第3页浏览型号BD234的Datasheet PDF文件第4页 
BD237 (NPN), BD234 (PNP),  
BD238 (PNP)  
Preferred Devices  
Plastic Medium Power  
Bipolar Transistors  
Designed for use in 5.0 to 10 W audio amplifiers and drivers  
utilizing complementary or quasi complementary circuits.  
http://onsemi.com  
Features  
2.0 AMPERES  
POWER TRANSISTORS  
25 WATTS  
• DC Current Gain −  
h
= 40 (Min) @ I = 0.15 Adc  
C
FE  
• Epoxy Meets UL 94 V0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B; >8000 V  
Machine Model, C; >400 V  
• Pb−Free Packages are Available*  
TO−225  
CASE 77  
STYLE 1  
MAXIMUM RATINGS  
3
2
1
BD237  
BD238  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol  
BD234  
45  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
W
MARKING DIAGRAM  
V
CEO  
V
CBO  
V
EBO  
80  
60  
100  
YWW  
BD23xG  
5.0  
2.0  
1.0  
25  
I
I
C
Base Current  
BD23x = Device Code  
x
Y
WW  
G
B
= 4, 7 or 8  
= Year  
= Work Week  
= Pb−Free Package  
Total Device Dissipation  
P
D
@ T = 25_C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
_C  
J
stg  
ORDERING INFORMATION  
THERMAL CHARACTERISTICS  
Characteristic  
Device  
Package  
Shipping  
Symbol  
Max  
Unit  
BD234  
TO−225  
500 Units / Box  
500 Units / Box  
Thermal Resistance, Junction−to−Case  
R
5.0  
_C/W  
q
JC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
BD234G  
TO−225  
(Pb−Free)  
BD237  
TO−225  
500 Units / Box  
500 Units / Box  
BD237G  
TO−225  
(Pb−Free)  
BD238  
TO−225  
500 Units / Box  
500 Units / Box  
BD238G  
TO−225  
(Pb−Free)  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 14  
BD237/D  
1234

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BD234 替代型号

型号 品牌 替代类型 描述 数据表
BD234G ONSEMI

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 Plastic Medium Power Bipolar Transistors

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BD234G ONSEMI

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BD234LEADFREE CENTRAL

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 		Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
BD234STU FAIRCHILD

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 		Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
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 		Silicon NPN Power Transistors
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BD235 STMICROELECTRONICS

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 		COMPLEMENTARY SILICON POWER TRANSISTORS
BD235 FAIRCHILD

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 		Medium Power Linear and Switching Applications
BD235 ONSEMI

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 		2A, 60V, NPN, Si, POWER TRANSISTOR, TO-126
BD235 NJSEMI

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 		Trans GP BJT NPN 60V 2A 3-Pin(3+Tab) SOT-32 Tube

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