Datasheet > BD139

BD139

更新时间： 2024-11-02 12:55:47

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
1页	126K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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BD139 数据手册

RoHS

BD135/137/139

BD135/BD137/BD139 TRANSISTOR (NPN)

TO-126

FEATURES

Power dissipation

P_CM:

1.25

1.5

W (Tamb=25℃)

1. EMITTER

Collector current

I_CM:

2. COLLECTOR

3. BASE

1 2 3

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

BD135

MIN

TYP

MAX

UNIT

V_(BR)CBO

Collector-base breakdown voltage

BD137

BD139

BD135

BD137

BD139

Ic=100µA, I_E=0

Ic=30mA, I_B=0

V_(BR)CEO

Collector-emitter breakdown voltage

V_(BR)EBO

I_CBO

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_E=100µA, I_C=0

_CB=30V, I_E=0

V_EB=5V, I_C=0

_CE=2V, I_C=5mA

µA

0.1

I_EBO

h_FE(1)

BD135

250

160

DC current gain

h_FE(2)

_CE=2V, I_C=150mA

BD137/BD139

h_FE(3)

V_CE(sat)

V_BE

_CE=2V, I_C=500mA

I_C=500mA, I_B=50mA

_CE=2V, I_C=500mA

Collector-emitter saturation voltage

Base-emitter voltage

0.5

WEJ ELECTRONIC CO.,LTD

CLASSIFICATION OF h_FE(2)

Rank

Range

40-100

63-160

100-250

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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