BD139

更新时间： 2024-11-02 12:50:19

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	235K
描述
NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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BD139 数据手册

Central

BD135

BD137

BD139

Semiconductor Corp.

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BD135,

BD137, and BD139 are NPN Silicon Epitaxial

Planar Transistors designed for audio amplifier

and switching applications.

MARKING: FULL PART NUMBER

TO-126 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL BD135 BD137 BD139 UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

100

CBO

CEO

EBO

5.0

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Peak Base Current

1.5

2.0

0.5

1.0

Power Dissipation (T ≤70°C)

8.0

Power Dissipation (T =25°C)

Operating and Storage Junction Temperature

1.25

-65 to +150

T , T

°C

°C/W

stg

Thermal Resistance

Jmb

Thermal Resistance

100

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=30V

100

CBO

=30V, T =125°C

µA

CBO

=5.0V

100

EBO

I =30mA (BD135)

CEO

I =30mA (BD137)

CEO

I =30mA (BD139)

CEO

I =500mA, I =50mA

0.5

1.0

CE(SAT)

=2.0V, I =500mA

BE(ON)

=2.0V, I =5.0mA

=2.0V, I =150mA

250

=2.0V, I =500mA

=5.0V, I =50mA, f=100MHz

190

MHz

BD135-10

BD137-10

BD139-10

BD135-16

BD137-16

BD139-16

SYMBOL

TEST CONDITIONS

=2.0V, I =500mA

MIN

MAX

160

MIN

100

MAX

250

R3 (18-September 2009)

中文翻译

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BD13910	FAIRCHILD	获取价格	暂无描述
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BD139-10	NXP	获取价格	NPN power transistors
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BD13910S	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor
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