5秒后页面跳转
BCX53,115 PDF预览

BCX53,115

更新时间: 2024-02-15 07:53:10
品牌 Logo 应用领域
恩智浦 - NXP 开关晶体管
页数 文件大小 规格书
22页 1122K
描述
80 V, 1 A PNP medium power transistor SOT-89 3-Pin

BCX53,115 技术参数

生命周期:Active零件包装代码:SOT-89
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:compliantHTS代码:8541.29.00.75
Factory Lead Time:4 weeks风险等级:0.61
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):63
JEDEC-95代码:TO-243AAJESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified参考标准:AEC-Q101; IEC-60134
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):145 MHz
Base Number Matches:1

BCX53,115 数据手册

 浏览型号BCX53,115的Datasheet PDF文件第2页浏览型号BCX53,115的Datasheet PDF文件第3页浏览型号BCX53,115的Datasheet PDF文件第4页浏览型号BCX53,115的Datasheet PDF文件第5页浏览型号BCX53,115的Datasheet PDF文件第6页浏览型号BCX53,115的Datasheet PDF文件第7页 
BCP53; BCX53; BC53PA  
80 V, 1 A PNP medium power transistors  
Rev. 9 — 19 October 2011  
Product data sheet  
1. Product profile  
1.1 General description  
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.  
Table 1. Product overview  
Type number[1]  
Package  
NXP  
NPN complement  
JEITA  
SC-73  
SC-62  
-
JEDEC  
BCP53  
BCX53  
BC53PA  
SOT223  
SOT89  
SOT1061  
-
BCP56  
BCX56  
BC56PA  
TO-243  
-
[1] Valid for all available selection groups.  
1.2 Features and benefits  
High current  
Three current gain selections  
High power dissipation capability  
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  
Leadless very small SMD plastic package with medium power capability (SOT1061)  
AEC-Q101 qualified  
1.3 Applications  
Linear voltage regulators  
High-side switches  
Battery-driven devices  
Power management  
MOSFET drivers  
Amplifiers  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
80  
1  
Unit  
V
VCEO  
IC  
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
A
ICM  
peak collector current  
single pulse; tp 1 ms  
2  
A
 
 
 
 
 
 

BCX53,115 替代型号

型号 品牌 替代类型 描述 数据表
BCX53-10,135 NXP

类似代替

80 V, 1 A PNP medium power transistor SOT-89 3-Pin
BCX53-16,115 NXP

类似代替

80 V, 1 A PNP medium power transistor SOT-89 3-Pin

与BCX53,115相关器件

型号 品牌 获取价格 描述 数据表
BCX53,146 ETC

获取价格

TRANS PNP 80V 1A SOT89
BCX53/DG/B2,115 NXP

获取价格

80 V, 1 A PNP medium power transistors, SOT89 Package, Standard Marking, Reel Pack, SMD, 7
BCX5310 DIODES

获取价格

PNP, 80V, 1A, SOT89
BCX53-10 CENTRAL

获取价格

SURFACE MOUNT PNP SILICON TRANSISTOR
BCX53-10 NXP

获取价格

PNP medium power transistors
BCX53-10 INFINEON

获取价格

PNP Silicon AF Transistors
BCX53-10 NEXPERIA

获取价格

80 V, 1 A PNP medium power transistorProduction
BCX53-10 WEITRON

获取价格

PNP Plastic-Encapsulate Transistor
BCX53-10 KEXIN

获取价格

PNP Medium Power Transistors
BCX53-10 TYSEMI

获取价格

High current (max. 1 A). Low voltage (max. 80 V). Emitter-base voltage VEBO -5 V