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BCX53-10/T3 PDF预览

BCX53-10/T3

更新时间: 2024-02-16 08:56:02
品牌 Logo 应用领域
恩智浦 - NXP 开关晶体管
页数 文件大小 规格书
22页 1115K
描述
TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-243AA, PLASTIC, TO-243, SC-62, 3 PIN, BIP General Purpose Power

BCX53-10/T3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-89包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
风险等级:5.1外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):63
JEDEC-95代码:TO-243AAJESD-30 代码:R-PSSO-F3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):1.3 W
认证状态:Not Qualified参考标准:AEC-Q101; IEC-60134
子类别:Other Transistors表面贴装:YES
端子面层:TIN端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):145 MHzBase Number Matches:1

BCX53-10/T3 数据手册

 浏览型号BCX53-10/T3的Datasheet PDF文件第2页浏览型号BCX53-10/T3的Datasheet PDF文件第3页浏览型号BCX53-10/T3的Datasheet PDF文件第4页浏览型号BCX53-10/T3的Datasheet PDF文件第5页浏览型号BCX53-10/T3的Datasheet PDF文件第6页浏览型号BCX53-10/T3的Datasheet PDF文件第7页 
BCP53; BCX53; BC53PA  
80 V, 1 A PNP medium power transistors  
Rev. 9 — 19 October 2011  
Product data sheet  
1. Product profile  
1.1 General description  
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.  
Table 1. Product overview  
Type number[1]  
Package  
NXP  
NPN complement  
JEITA  
SC-73  
SC-62  
-
JEDEC  
BCP53  
BCX53  
BC53PA  
SOT223  
SOT89  
SOT1061  
-
BCP56  
BCX56  
BC56PA  
TO-243  
-
[1] Valid for all available selection groups.  
1.2 Features and benefits  
High current  
Three current gain selections  
High power dissipation capability  
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  
Leadless very small SMD plastic package with medium power capability (SOT1061)  
AEC-Q101 qualified  
1.3 Applications  
Linear voltage regulators  
High-side switches  
Battery-driven devices  
Power management  
MOSFET drivers  
Amplifiers  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
80  
1  
Unit  
V
VCEO  
IC  
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
A
ICM  
peak collector current  
single pulse; tp 1 ms  
2  
A

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