BCX5316

更新时间： 2024-09-28 22:35:11

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
1页	36K
描述
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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数据手册

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BCX5316 数据手册

SOT89 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 4 – MARCH 2001

BCX5316

COMPLIMENTARY TYPE – BCX5616

PARTMARKING DETAIL – AL

SOT89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-100

Collector-Emitter Voltage

Emitter-Base Voltage

-80

-5

Peak Pulse Current

-1.5

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

-1

P_tot

°C

T_j:T_stg

-65 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-100

-80

-5

IC =-100µA

Breakdown voltage

Collector-Emitter

Breakdown Voltage

IC =-10mA

Emitter-Base

Breakdown Voltage

I_E=-10µA

Collector Cut-Off

Current

-0.1

-20

µA

_CB=-30V

_CB=-30V, T_amb=150°C

Emitter Cut-Off Current I_EBO

-10

µA

V_EB=-4V

Collector-Emitter

V_CE(sat)

V_BE(on)

h_FE

-0.5

I_C=-500mA, I_B=-50mA*

Saturation Voltage

Base-Emitter Turn-On

Voltage

-1.0

250

I_C=-500mA, V_CE=-2V*

I_C=-5mA, V_CE=-2V*

Static Forward Current

Transfer Ratio

100

_C=-150mA, V_CE=-2V*

I_C=-500mA, V_CE=-2V*

Transition Frequency

Output Capacitance

f_T

150

MHz I_C=-50mA, V_CE=-10V,

f=100MHz

C_obo

V_CB=-10V, f=1MHz

*Measured under pulsed conditions.

TBA

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