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BCX52-10-TP PDF预览

BCX52-10-TP

更新时间: 2024-02-26 13:33:29
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
3页 281K
描述
Small Signal Bipolar Transistor, 1A I(C), PNP, ROHS COMPLIANT, PLASTIC PACKAGE-3

BCX52-10-TP 技术参数

生命周期:Active包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.58外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):63
JESD-30 代码:R-PSSO-F3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):1.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

BCX52-10-TP 数据手册

 浏览型号BCX52-10-TP的Datasheet PDF文件第2页浏览型号BCX52-10-TP的Datasheet PDF文件第3页 
M C C  
BCX52  
BCX52-10  
BCX52-16  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
PNP  
ꢀꢁ Power Dissipation: PCM=0.5W (Tamb=25R)  
ꢀꢁ Collector Current: ICM=-1.0A  
Plastic-Encapsulate  
Transistors  
ꢀꢁ Collector-Base Voltage: V(BR)CBO=-60V  
ꢀꢁ Marking Code: BCX52=AE, BCX52-10=AG, BCX52-16=AM  
·
Epoxy meets UL 94 V-0 flammability rating  
·
Moisure Sensitivity Level 1  
Maximum Ratings  
Symbol  
V(BR)CBO  
V(BR)CEO  
Rating  
Value  
-60  
-60  
Unit  
V
V
SOT-89  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
A
V(BR)EBO  
IC  
Emitter-Base Breakdown Voltage  
Collector Current DC  
-5  
-1.0  
V
A
K
B
PC  
TJ  
TSTG  
Collector Power Dissipation  
Junction TemperatureRange  
Storage Temperature  
Range  
0.5  
-55 to +150  
-55 to +150  
W
OC  
OC  
E
Electrical Characteristics @ 25C Unless Otherwise Specified  
Typ  
C
Symbol  
Parameter  
Min  
Max Units  
D
OFF CHARACTERISTICS  
Collector-Base Breakdown Voltage  
(IC=-100uA, IE=0)  
G
H
V(BR)CBO  
-60  
---  
---  
---  
---  
---  
---  
V
V
J
F
Collector-Emitter Breakdown Voltage  
(IC=-1mA, IB=0)  
V(BR)CEO  
V(BR)EBO  
-60  
-5  
Emitter-Base Breakdown Voltage  
(IE=-100uA, IC=0)  
V
ICBO  
IEBO  
Collector Cutoff Current  
(VCB=-30V, IE=0)  
Emitter Cutoff Current  
(VEB=-5.0V, IC=0)  
uA  
---  
---  
---  
---  
-0.1  
-0.1  
B
E
C
uA  
hFE(1)  
DC Current Gain  
(VCE=-2.0V, IC=-150mA)  
BCX52  
63  
63  
100  
---  
---  
---  
250  
160  
250  
---  
BCX52-10  
BCX52-16  
ꢀꢁꢂꢃꢄꢅꢁꢄꢅꢆ  
hFE(2)  
hFE(3)  
VCE(sat)  
VBE(on)  
fT  
DC Current Gain  
(VCE=2.0V, IC=-5.0mA)  
DC Current Gain  
63  
40  
---  
ꢈꢀꢇꢆ  
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢀꢁꢆ ꢇꢉꢊꢆ  
ꢇꢇꢆ  
ꢁꢋꢌꢄꢅꢆ  
ꢇꢀꢁꢆ  
ꢒꢍꢐꢓꢆ  
1.55  
ꢇꢉꢊꢆ  
ꢒꢍꢔꢕꢆ  
ꢇꢇꢇꢇꢇ  
ꢉꢆ  
ꢍꢎꢏꢐꢆ  
ꢍꢎꢑꢎꢆ  
(VCE=-2.0V, IC=-500mA)  
Collector-Emitter Saturation Voltage  
(IC=-500mA,IB=-50mA)  
Base-Emitter Voltage  
(IC=-500mA, VCE=-2.0V)  
Transition Frequency  
(VCE=-5V, IC=-10mA,  
f=100MHz)  
.061  
ꢇꢇꢇꢇꢇ  
REF.  
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
ꢙꢆ  
ꢝꢆ  
ꢃꢆ  
ꢞꢆ  
ꢍꢎꢗꢒꢆ  
ꢍꢕꢐꢎꢆ  
ꢍꢕꢓꢘꢆ  
ꢍꢎꢎꢑꢆ  
ꢍꢕꢎꢐꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢗꢗꢆ  
ꢍꢎꢔꢗꢆ  
ꢍꢕꢐꢓꢆ  
ꢍꢎꢕꢕꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢍꢕꢎꢓꢆ  
ꢍꢕꢘꢎꢆ  
ꢍꢕꢎꢔꢆ  
ꢍꢕꢔꢐꢆ  
ꢐꢍꢓꢎꢆ  
ꢕꢍꢑꢕꢆ  
ꢘꢍꢐꢒꢆ  
ꢐꢍꢕꢕꢆ  
ꢕꢍꢐꢐꢆ  
ꢕꢍꢐꢑꢆ  
ꢕꢍꢐꢑꢆ  
ꢎꢍꢒꢕꢆ  
ꢒꢍ25  
ꢎꢍꢕꢕꢆ  
ꢘꢍꢗꢒꢆ  
ꢚꢚꢚꢚꢚꢆ  
-0.5  
-1  
V
V
---  
---  
ꢌꢛꢜꢆ  
---  
---  
ꢕꢍꢒꢑꢆ  
ꢕꢍꢗꢐꢆ  
ꢕꢍꢒꢎꢆ  
ꢎꢍꢔꢕꢆ  
50  
---  
MHz  
 ꢆ  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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