Datasheet > BCX52-16-AM

BCX52-16-AM

更新时间： 2024-09-24 22:12:39

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
1页	22K
描述
SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BCX52-16-AM 数据手册

BCX51

BCX52

BCX53

SOT89 PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 3 – FEBRUARY 1996

✪

COMPLEMENTARY TYPE –

BCX51 – BCX54

BCX52 – BCX55

BCX53 – BCX56

PARTMARKING DETAILS –

BCX51

– AA

BCX52

– AE

BCX53

– AH

BCX51-10 – AC

BCX51-16 – AD

BCX52-10 – AG

BCX52-16 – AM

BCX53-10 – AK

BCX53-16 – AL

SOT89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

S YMBOL

V_CBO

V_CEO

V_EBO

I_CM

BCX51

-45

BCX52

BCX53

-100

UNIT

Co lle cto r-Ba s e Vo lta g e

-60

-5

Co lle cto r-Em itte r Vo lta g e

Em itte r-Ba s e Vo lta g e

-45

-80

Pe ak Pu ls e Cu rre n t

-1.5

-1

Co n tin u o u s Co lle cto r Cu rre n t

Po w er Dis s ip a tio n a t T_{a m b}=25°C

I_C

P_{to t}

°C

Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e

T_j:T_{s tg}

-65 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherw ise stated).

am b

PARAMETER

S YMBOL MIN. TYP. MAX. UNIT CONDITIONS .

Co lle cto r-Ba s e

Bre a kd o w n

Vo lta g e

BCX53

BCX52

BCX51

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

-100

-60

-45

I_C=-100µA

Co lle cto r-Em itte r BCX53

Bre a kd o w n

Vo lta g e

-80

-60

-45

I_C=-10m A*

BCX52

BCX51

Em itte r-Ba s e

-5

I_E=-10µA

Bre a kd o w n Vo ltag e

Co lle cto r Cu t-Off Cu rre n t I_CBO

-0.1

-20

V_CB=-30V

µA

_CB=-30V, T_{a m b}=150°C

Em itte r Cu t-Off Cu rren t

I_EBO

-20

n A

V_EB=-4V

Co lle cto r-Em itte r

S atu ra tio n Vo lta g e

V_{CE(s a t)}

-0.5

I_C=-500m A, I_B=-50m A*

I_C=-500m A, V_CE=-2V*

Bas e -Em itte r

Tu rn -On Vo ltag e

V_{BE(o n )}

h _FE

-1.0

S tatic Fo rw a rd Cu rren t

Tran s fe r Ra tio

I_C=-5m A, V_CE=-2V*

I_C=-150m A, V_CE=-2V*

I_C=-500m A, V_CE=-2V*

I_C=-150m A, V_CE=-2V*

250

-10

-16

160

250

100

Tran s itio n Fre q u e n cy

Ou tp u t Ca p a cita n ce

f_T

150

MHz I_C=-50m A, V_CE=-10V,

f=100MHz

C_{o b o}

p F

V_CB=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

3 - 34

中文翻译

下载PDF

与BCX52-16-AM相关器件

型号	品牌	获取价格	描述	数据表
BCX52-16E6327	INFINEON	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
BCX52-16-E6327	INFINEON	获取价格	PNP Silicon AF Transistors
BCX5216E6327HTSA1	INFINEON	获取价格	Power Bipolar Transistor,
BCX52-16E6433	INFINEON	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
BCX52-16-G	COMCHIP	获取价格	General Purpose Transistor
BCX5216H6327XTSA1	INFINEON	获取价格	Transistor,
BCX52-16LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
BCX5216Q	DIODES	获取价格	PNP, 60V, 1A, SOT89
BCX5216QTA	DIODES	获取价格	Small Signal Bipolar Transistor
BCX52-16T	NEXPERIA	获取价格	60 V, 1 A PNP power bipolar transistorsProduction