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BCX52-10TR PDF预览

BCX52-10TR

更新时间: 2024-09-24 19:57:03
品牌 Logo 应用领域
CENTRAL 放大器晶体管
页数 文件大小 规格书
2页 71K
描述
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

BCX52-10TR 技术参数

生命周期:Active包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.58外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):63
JESD-30 代码:R-PSSO-F3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):1.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

BCX52-10TR 数据手册

 浏览型号BCX52-10TR的Datasheet PDF文件第2页 
TM  
BCX51  
BCX52  
BCX53  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
DESCRIPTION:  
PNP SILICON TRANSISTOR  
The CENTRAL SEMICONDUCTOR BCX51,  
BCX52, and BCX53 types are PNP Silicon  
Transistors manufactured by the epitaxial planar  
process, epoxy molded in a surface mount  
package, designed for high current general  
purpose amplifier applications.  
MARKING CODE: PLEASE SEE MARKING  
CODE TABLE ON FOLLOWING PAGE  
SOT-89 CASE  
MAXIMUM RATINGS (T =25°C)  
A
BCX51  
45  
45  
BCX52  
60  
BCX53  
100  
80  
UNITS  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Peak Collector Current  
Base Current  
Peak Base Current  
Power Dissipation  
Operating and Storage  
Junction Temperature  
Thermal Resistance  
V
V
V
CBO  
CEO  
EBO  
60  
V
5.0  
V
I
1.0  
A
C
I
1.5  
A
CM  
I
100  
200  
1.2  
mA  
mA  
W
B
I
BM  
P
D
T ,T  
J stg  
-65 to +150  
104  
°C  
°C/W  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
100  
10  
UNITS  
nA  
µA  
nA  
V
I
I
I
V
V
V
=30V  
CBO  
CBO  
EBO  
CB  
CB  
EB  
=30V, T =125°C  
A
=5.0V  
100  
BV  
BV  
BV  
BV  
BV  
BV  
V
V
h
h
h
I =100µA (BCX51)  
45  
60  
100  
45  
60  
80  
CBO  
CBO  
CBO  
CEO  
CEO  
CEO  
CE(SAT)  
BE(ON)  
FE  
C
I =100µA (BCX52)  
V
C
I =100µA (BCX53)  
V
C
I =10mA (BCX51)  
V
C
I =10mA (BCX52)  
V
C
I =10mA (BCX53)  
V
C
I =500mA, I =50mA  
0.5  
1.0  
V
C
B
V
=2.0V, I =500mA  
V
CE  
CE  
CE  
CE  
B
V
V
V
=2.0V, I =5.0mA  
63  
63  
C
=2.0V, I =150mA  
250  
160  
250  
FE  
C
=2.0V, I =150mA  
FE  
FE  
FE  
C
(BCX51-10, BCX52-10, BCX53-10)  
63  
h
h
V
=2.0V, I =150mA  
CE  
(BCX51-16, BCX52-16, BCX53-16)  
=2.0V, I =500mA  
C
100  
40  
V
CE  
C
C
f
V
=5.0V, I =10mA, f=100MHz  
50  
MHz  
T
CE  
R3 (20-May 2004)  

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