5秒后页面跳转
BCX52-16,115 PDF预览

BCX52-16,115

更新时间: 2024-01-03 04:16:09
品牌 Logo 应用领域
恩智浦 - NXP 放大器晶体管
页数 文件大小 规格书
22页 1125K
描述
60 V, 1 A PNP medium power transistor SOT-89 3-Pin

BCX52-16,115 技术参数

生命周期:Active零件包装代码:SOT-89
包装说明:SC-62, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:4 weeks
风险等级:0.78外壳连接:COLLECTOR
配置:SINGLEJEDEC-95代码:TO-243
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BCX52-16,115 数据手册

 浏览型号BCX52-16,115的Datasheet PDF文件第2页浏览型号BCX52-16,115的Datasheet PDF文件第3页浏览型号BCX52-16,115的Datasheet PDF文件第4页浏览型号BCX52-16,115的Datasheet PDF文件第5页浏览型号BCX52-16,115的Datasheet PDF文件第6页浏览型号BCX52-16,115的Datasheet PDF文件第7页 
BCP52; BCX52; BC52PA  
60 V, 1 A PNP medium power transistors  
Rev. 9 — 18 October 2011  
Product data sheet  
1. Product profile  
1.1 General description  
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.  
Table 1. Product overview  
Type number[1]  
Package  
NXP  
NPN complement  
JEITA  
SC-73  
SC-62  
-
JEDEC  
BCP52  
BCX52  
BC52PA  
SOT223  
SOT89  
SOT1061  
-
BCP55  
BCX55  
BC55PA  
TO-243  
-
[1] Valid for all available selection groups.  
1.2 Features and benefits  
High current  
Three current gain selections  
High power dissipation capability  
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  
Leadless very small SMD plastic package with medium power capability (SOT1061)  
AEC-Q101 qualified  
1.3 Applications  
Linear voltage regulators  
High-side switches  
Battery-driven devices  
Power management  
MOSFET drivers  
Amplifiers  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
60  
1  
Unit  
V
VCEO  
IC  
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
A
ICM  
peak collector current  
single pulse; tp 1 ms  
2  
A
 
 
 
 
 
 

BCX52-16,115 替代型号

型号 品牌 替代类型 描述 数据表
BCX52-16,135 NXP

类似代替

60 V, 1 A PNP medium power transistor SOT-89 3-Pin
BCX52TA DIODES

功能相似

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

与BCX52-16,115相关器件

型号 品牌 获取价格 描述 数据表
BCX52-16,135 NXP

获取价格

60 V, 1 A PNP medium power transistor SOT-89 3-Pin
BCX52-16-AM ZETEX

获取价格

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
BCX52-16E6327 INFINEON

获取价格

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
BCX52-16-E6327 INFINEON

获取价格

PNP Silicon AF Transistors
BCX5216E6327HTSA1 INFINEON

获取价格

Power Bipolar Transistor,
BCX52-16E6433 INFINEON

获取价格

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
BCX52-16-G COMCHIP

获取价格

General Purpose Transistor
BCX5216H6327XTSA1 INFINEON

获取价格

Transistor,
BCX52-16LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
BCX5216Q DIODES

获取价格

PNP, 60V, 1A, SOT89