生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.37 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 25 | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 50 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCX52-16-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
BCX52-16TR | CENTRAL |
获取价格 |
暂无描述 | |
BCX52-16TR13 | CENTRAL |
获取价格 |
Transistor | |
BCX52-6 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 | |
BCX52-AE | ZETEX |
获取价格 |
SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | |
BCX52AF | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MI | |
BCX52AG | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MI | |
BCX52BK | CENTRAL |
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Transistor | |
BCX52E6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon | |
BCX52E6327 | ROCHESTER |
获取价格 |
1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR |