BCX52TR

更新时间： 2024-11-27 13:05:55

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	107K
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中文翻译

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数据手册

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BCX52TR 数据手册

BCX51

BCX52

BCX53

Central

Semiconductor Corp.

SURFACE MOUNT

DESCRIPTION:

PNP SILICON TRANSISTOR

The CENTRAL SEMICONDUCTOR BCX51,

BCX52, and BCX53 types are PNP Silicon

Transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for high current general

purpose amplifier applications.

SOT-89 CASE

MAXIMUM RATINGS (T =25°C)

BCX51

BCX52

BCX53

100

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

5.0

1.0

Peak Collector Current

Base Current

1.5

100

200

1.2

Peak Base Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

J stg

-65 to +150

104

°C

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

100

UNITS

µA

=30V

CBO

EBO

=30V, T =125°C

=5.0V

100

I =100µA (BCX51)

CBO

CEO

CE(SAT)

BE(ON)

I =100µA (BCX52)

I =100µA (BCX53)

100

I =10mA (BCX51)

I =10mA (BCX52)

I =10mA (BCX53)

I =500mA, I =50mA

0.5

1.0

=2.0V, I =500mA

=2.0V, I =5.0mA

=2.0V, I =150mA

250

160

250

=2.0V, I =150mA

(BCX51-10, BCX52-10, BCX53-10)

=2.0V, I =150mA

(BCX51-16, BCX52-16, BCX53-16)

=2.0V, I =500mA

100

=5.0V, I =10mA, f=100MHz

MHz

R1 ( 18-December 2001)

中文翻译

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