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BCX53 PDF预览

BCX53

更新时间: 2024-11-27 06:41:47
品牌 Logo 应用领域
WEITRON 晶体晶体管
页数 文件大小 规格书
3页 681K
描述
PNP Plastic-Encapsulate Transistor

BCX53 数据手册

 浏览型号BCX53的Datasheet PDF文件第2页浏览型号BCX53的Datasheet PDF文件第3页 
BCX53  
PNP Plastic-Encapsulate Transistor  
P b  
Lead(Pb)-Free  
1. BASE  
2. COLLECTOR  
1
2
3
3. EMITTER  
SOT-89  
MAXIMUM RATINGS ( T =25°C unless otherwise noted)  
A
Rating  
Symbol  
Value  
-100  
-80  
Unit  
V
CBO  
V
V
Collector-Base Voltage  
V
CEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
EBO  
V
A
-5.0  
-1.0  
I
C
Collector Current Continuous  
P
T
mW  
˚C  
500  
Total Device Dissipation T =25°C  
D
A
+150  
J
Junction Temperature Range  
Storage Temperature Range  
-55 to +150  
˚C  
Tstg  
Device Marking  
BCX53=AH , BCX53-10=AK , BCX53-16=AL  
OFF CHARACTERISTICS  
Characteristics  
Symbol  
Min  
Max  
-100  
-80  
Unit  
V
V
V
Collector-Base Breakdown Voltage, I = -100µA, I = 0  
V(BR)  
V(BR)  
V(BR)  
I
-
-
-
C
E
CBO  
CEO  
EBO  
Collector-Emitter Breakdown Voltage, I = -10mA, I = 0  
C
B
Emitter-Base Breakdown Voltage, I = -10µA, I = 0  
-5.0  
E
C
Collector Cut-off Current, V = -30V, I = 0  
µA  
µA  
-
-
-0.1  
-0.1  
CB  
E
CBO  
Emitter Cut-off Current, V = -5.0V, I = 0  
I
EBO  
EB  
C
WEITRON  
http://www.weitron.com.tw  
1/3  
12-Oct-06  

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