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BCX52U PDF预览

BCX52U

更新时间: 2024-11-25 14:56:03
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
4页 559K
描述
功率三极管

BCX52U 数据手册

 浏览型号BCX52U的Datasheet PDF文件第2页浏览型号BCX52U的Datasheet PDF文件第3页浏览型号BCX52U的Datasheet PDF文件第4页 
BCX52U  
PNP Silicon Epitaxial Planar Power Transistor  
Features  
• Low Saturation Voltage VCE(sat)  
• Epitaxial Planar Die Construction  
Applications  
• Medium Power Switching or Amplification Applications  
• AF driver and output stages  
Absolute Maximum Ratings  
Parameter  
Symbol  
-VCBO  
-VCEO  
-VEBO  
-IC  
Value  
Unit  
V
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
60  
60  
V
5
V
Collector Current  
1
A
Peak Collector Current, Pulsed  
Total Power Dissipation  
Junction Temperature  
Storage Temperature Range  
-ICM  
1.5  
A
Ptot  
1
W
Tj  
150  
- 55 to + 150  
Tstg  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
125  
Unit  
/W  
Thermal Resistance from Junction to Ambient 1)  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.  
1 / 4  
®
Dated: 29/04/2021 Rev:01  

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