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BCV29H6327XTSA1 PDF预览

BCV29H6327XTSA1

更新时间: 2024-11-24 21:15:51
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器晶体管
页数 文件大小 规格书
7页 518K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3

BCV29H6327XTSA1 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:6 weeks
风险等级:5.7外壳连接:COLLECTOR
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:30 V
配置:DARLINGTON最小直流电流增益 (hFE):4000
JESD-30 代码:R-PSSO-F3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
表面贴装:YES端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

BCV29H6327XTSA1 数据手册

 浏览型号BCV29H6327XTSA1的Datasheet PDF文件第2页浏览型号BCV29H6327XTSA1的Datasheet PDF文件第3页浏览型号BCV29H6327XTSA1的Datasheet PDF文件第4页浏览型号BCV29H6327XTSA1的Datasheet PDF文件第5页浏览型号BCV29H6327XTSA1的Datasheet PDF文件第6页浏览型号BCV29H6327XTSA1的Datasheet PDF文件第7页 
BCV29, BCV49  
NPN Silicon Darlington Transistors  
1
For general AF applications  
High collector current  
2
3
2
High current gain  
Complementary types: BCV28, BCV48 (PNP)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Type  
BCV29  
BCV49  
Marking  
EF  
EG  
Pin Configuration  
Package  
SOT89  
SOT89  
1=B  
1=B  
2=C  
2=C  
3=E  
3=E  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
BCV29  
BCV49  
V
V
V
CEO  
CBO  
EBO  
30  
60  
Collector-base voltage  
BCV29  
BCV49  
40  
80  
10  
500  
800  
100  
200  
1
Emitter-base voltage  
Collector current  
mA  
I
C
Peak collector current, t 10 ms  
I
CM  
I
B
p
Base current  
Peak base current  
Total power dissipation-  
I
BM  
W
P
tot  
T 130 °C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
2011-10-05  
1

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