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BCV46 PDF预览

BCV46

更新时间: 2024-11-26 22:27:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管达林顿晶体管
页数 文件大小 规格书
4页 145K
描述
PNP Silicon Darlington Transistors (For general AF applications High collector current)

BCV46 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life零件包装代码:SOT-23
包装说明:ROHS COMPLIANT, SOT-23, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.13
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:60 V
配置:DARLINGTON最小直流电流增益 (hFE):2000
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

BCV46 数据手册

 浏览型号BCV46的Datasheet PDF文件第2页浏览型号BCV46的Datasheet PDF文件第3页浏览型号BCV46的Datasheet PDF文件第4页 
PNP Silicon Darlington Transistors  
BCV 26  
BCV 46  
For general AF applications  
High collector current  
High current gain  
Complementary types: BCV 27, BCV 47 (NPN)  
Package1)  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
BCV 26  
BCV 46  
FDs  
FEs  
Q62702-C1493  
Q62702-C1475  
B
E
C
SOT-23  
Maximum Ratings  
Parameter  
Symbol Values  
Unit  
BCV 26  
BCV 46  
60  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CE0  
CB0  
EB0  
30  
V
40  
80  
10  
10  
I
I
I
I
C
500  
mA  
Peak collector current  
Base current  
CM  
800  
100  
200  
360  
150  
B
Peak base current  
BM  
Total power dissipation, T  
S
= 74 ˚C Ptot  
mW  
˚C  
Junction temperature  
T
T
j
Storage temperature range  
stg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
280  
210  
K/W  
Junction - soldering point  
R
1)  
For detailed information see chapter Package Outlines.  
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
2)  
5.91  
Semiconductor Group  
1

BCV46 替代型号

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