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BCV46TA

更新时间: 2024-11-20 20:44:39
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
1页 41K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, SOT-23, 3 PIN

BCV46TA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:15 weeks
风险等级:0.73最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:60 V配置:DARLINGTON
最小直流电流增益 (hFE):2000JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

BCV46TA 数据手册

  
SOT23 PNP SILICON PLANAR  
DARLINGTON TRANSISTORS  
ISSUE 3 – SEPTEMBER 1995  
BCV26  
BCV46  
FEATURES  
*
Low saturation voltage  
E
C
COMPLEMENTARY TYPE –  
PARTMARKING DETAILS –  
BCV26 - BCV27  
BCV46 - BCV47  
BCV26 - ZFD  
BCV46 - ZFE  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
BCV26  
-40  
BCV46  
UNIT  
V
Collector-Base Voltage  
-80  
-60  
Collector-Emitter Voltage  
-30  
V
Emitter-Base Voltage  
-10  
-800  
-500  
-100  
330  
V
Peak Pulse Current  
mA  
mA  
mA  
mW  
°C  
Continuous Collector Current  
Base Current  
IC  
IB  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
Ptot  
Tj:Tstg  
-55 to +150  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
BCV26  
BCV46  
CONDITIONS.  
UNIT  
MIN. MAX. MIN. MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-40  
-30  
-10  
-80  
-60  
-10  
IC=100µA  
IC=10mA *  
IE=10µA  
V
V
V
Collector-Emitter  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
-100  
-10  
VCB = -30V  
nA  
nA  
µA  
µA  
-100  
VCB = -60V  
VCB=-30V,Tamb=150oC  
VCB=-60V,Tamb=150oC  
-10  
Emitter Base  
Cut-Off Current  
IEBO  
-100  
-1.0  
-1.5  
-100  
VEB=-4V  
nA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
-1.0  
-1.5  
IC=-100mA,IB=-0.1mA*  
IC=-100mA,IB=-0.1mA*  
V
Base-Emitter  
Saturation Voltage  
V
Static Forward Current hFE  
Transfer Ratio  
4K  
2K  
4K  
10K  
2K  
IC=-100µΑ, VCE=-1V†  
IC=-10mA, VCE=-5V*  
IC=-100mA, VCE=-5V*  
IC=-500mA, VCE=-5V*  
10K  
20K  
4K  
Transition Frequency fT  
200 Typical  
200 Typical  
IC=-50mA, VCE=-5V  
f = 20MHz  
MHz  
pF  
Output Capacitance  
Cobo  
4.5 Typical  
4.5 Typical  
VCB=-10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for these devices  
† Periodic Sample Test Only.  
3 - 21  

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