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BCV47 PDF预览

BCV47

更新时间: 2024-11-19 22:27:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号双极晶体管达林顿晶体管
页数 文件大小 规格书
4页 144K
描述
NPN Silicon Darlington Transistors (For general AF applications High collector current)

BCV47 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:6.1
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:60 V配置:DARLINGTON
最小直流电流增益 (hFE):2000JEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):170 MHz
Base Number Matches:1

BCV47 数据手册

 浏览型号BCV47的Datasheet PDF文件第2页浏览型号BCV47的Datasheet PDF文件第3页浏览型号BCV47的Datasheet PDF文件第4页 
NPN Silicon Darlington Transistors  
BCV 27  
BCV47  
For general AF applications  
High collector current  
High current gain  
Complementary types: BCV 26, BCV 46 (PNP)  
Package1)  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
BCV 27  
BCV 47  
FFs  
FGs  
Q62702-C1474  
Q62702-C1501  
B
E
C
SOT-23  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
BCV 27  
30  
BCV 47  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CE0  
CB0  
EB0  
60  
80  
10  
V
40  
10  
I
I
I
I
C
500  
mA  
Peak collector current  
Base current  
CM  
800  
100  
200  
360  
150  
B
Peak base current  
BM  
Total power dissipation, T  
S
= 74 ˚C Ptot  
mW  
˚C  
Junction temperature  
T
T
j
Storage temperature range  
stg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
280  
210  
K/W  
Junction - soldering point  
R
1)  
For detailed information see chapter Package Outlines.  
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
2)  
5.91  
Semiconductor Group  
1

BCV47 替代型号

型号 品牌 替代类型 描述 数据表
BCV47E6433 INFINEON

完全替代

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,
BCV47E6327 INFINEON

完全替代

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,
BCV47E6327HTSA1 INFINEON

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Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon

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