Datasheet > BCV47_10

BCV47_10

更新时间： 2024-11-21 08:50:47

品牌	Logo	应用领域
CENTRAL		晶体晶体管达林顿晶体管
页数	文件大小	规格书
2页	322K
描述
SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR

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BCV47_10 数据手册

BCV47

www.centralsemi.com

SURFACE MOUNT

NPN

SILICON DARLINGTON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCV47 type is a

Silicon NPN Darlington Transistor manufactured by the

epitaxial planar process, epoxy molded in a surface mount

package, designed for applications requiring extremely high

gain.

MARKING CODE: FG

SOT-23 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

500

°C

800

Continuous Base Current

Power Dissipation

100

350

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=30V

=10V

100

CBO

EBO

I =10mA

CEO

CBO

EBO

I =10µA

I =100nA

I =100mA, I =0.1mA

1.0

1.5

CE(SAT)

BE(SAT)

I =100mA, I =0.1mA

=5.0V, I =1.0mA

2,000

4,000

=5.0V, I =10mA

=5.0V, I =100mA

10,000

=5.0V, I =30mA, f=100MHz

220

MHz

R2 (20-November 2009)

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