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BCV47E6433HTMA1 PDF预览

BCV47E6433HTMA1

更新时间: 2024-11-18 21:00:59
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管晶体管
页数 文件大小 规格书
7页 524K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon

BCV47E6433HTMA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:4 weeks风险等级:5.6
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:60 V
配置:DARLINGTON最小直流电流增益 (hFE):2000
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):170 MHzBase Number Matches:1

BCV47E6433HTMA1 数据手册

 浏览型号BCV47E6433HTMA1的Datasheet PDF文件第2页浏览型号BCV47E6433HTMA1的Datasheet PDF文件第3页浏览型号BCV47E6433HTMA1的Datasheet PDF文件第4页浏览型号BCV47E6433HTMA1的Datasheet PDF文件第5页浏览型号BCV47E6433HTMA1的Datasheet PDF文件第6页浏览型号BCV47E6433HTMA1的Datasheet PDF文件第7页 
BCV27, BCV47  
NPN Silicon Darlington Transistors  
For general AF applications  
High collector current  
High current gain  
2
1
3
Complementary types: BCV26, BCV46 (PNP)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Type  
BCV27  
BCV47  
Marking  
FFs  
FGs  
Pin Configuration  
Package  
SOT23  
SOT23  
1=B  
1=B  
2=E  
2=E  
3=C  
3=C  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
BCV27  
BCV47  
V
V
V
CEO  
CBO  
EBO  
30  
60  
Collector-base voltage  
BCV27  
BCV47  
40  
80  
10  
500  
800  
100  
200  
360  
Emitter-base voltage  
Collector current  
mA  
I
C
Peak collector current, t 10 ms  
I
CM  
I
B
p
Base current  
Peak base current  
Total power dissipation-  
I
BM  
mW  
°C  
P
tot  
T 74 °C  
S
150  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
2011-10-05  
1

BCV47E6433HTMA1 替代型号

型号 品牌 替代类型 描述 数据表
BCV47E6327HTSA1 INFINEON

完全替代

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
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