Datasheet > BCV48-Q

BCV48-Q

更新时间： 2023-09-03 20:28:16

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
8页	176K
描述
PNP Darlington transistorProduction

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BCV48-Q 数据手册

BCV48-Q

PNP Darlington transistor

6 April 2023

Product data sheet

1. General description

PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic

package.

NPN complement: BCV49-Q

2. Features and benefits

•

Very high DC current gain (min. 10000)

•

High current (max. 500 mA)

Low voltage (max. 60 V)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Applications, where very high amplification is required

4. Quick reference data

Table 1. Quick reference data

Symbol

I_C

Parameter

Conditions

Min

Typ

Max

-500

Unit

collector current

DC current gain

h_FE

V_CE= -5 V; I_C= -1 mA; T_amb= 25 °C

2000

5. Pinning information

Table 2. Pinning information

Symbol

Description

emitter

Simplified outline

Graphic symbol

collector

base

TR1

TR2

SOT89

sym088

12 3 4 5 6 7 8

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